Open AccessCompositional aspects of the vapour-phase epitaxial growth of GaInAs layers from Ga-In-As-H-Cl system
Author(s) -
V. N. Deiva Mani
Publication year - 1994
Publication title -
bulletin of materials science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.35
H-Index - 72
eISSN - 0973-7669
pISSN - 0250-4707
DOI - 10.1007/bf02757891
Subject(s) - epitaxy , materials science , growth rate , ternary operation , phase (matter) , kinetics , vapor phase , thermodynamics , kinetic energy , layer (electronics) , deposition (geology) , analytical chemistry (journal) , nanotechnology , chemistry , chromatography , organic chemistry , mathematics , paleontology , geometry , physics , quantum mechanics , sediment , biology , computer science , programming language
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