Oxygen incorporation duringin situ growth of YBCO films on both sides of substrates | Zendy

S. P. Pai | Zendy; R. Pinto | Zendy; P. R. Apte | Zendy; C. P. D’Souza | Zendy; A. G. Chourey | Zendy; Dhananjay Kumar | Zendy

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Oxygen incorporation duringin situ growth of YBCO films on both sides of substrates

Author(s) -

S. P. Pai,

R. Pinto,

P. R. Apte,

C. P. D’Souza,

A. G. Chourey,

Dhananjay Kumar

Publication year - 1993

Publication title -

bulletin of materials science

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.35

H-Index - 72

eISSN - 0973-7669

pISSN - 0250-4707

DOI - 10.1007/bf02757663

Subject(s) - materials science , torr , oxygen , in situ , fabrication , diffusion , atmospheric temperature range , resonator , analytical chemistry (journal) , optoelectronics , composite material , thermodynamics , medicine , chemistry , physics , alternative medicine , organic chemistry , pathology , chromatography , meteorology

Oxygen out-diffusion during cooling and heating of in situ grown YBa2Cu3O7-delta (YBCO) films in low oxygen pressure used during growth by pulsed laser deposition was studied in the temperature range 700-450-degrees-C using in situ resistance measurements. Results indicate that irrespective of the number of cooling and heating cycles seen by the films full oxygenation of the films can be realized by the final cooling from the growth temperature in 500 torr oxygen pressure. This result has been successfully used to sequentially grow high quality YBCO films on both sides of LaAlO3 substrates. These films have been used for the fabrication of X-band microstrip resonators with superconducting ground plane

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