Open AccessGrowth, characterization and electrical anisotropy in GaTe—a natural semiconducting superlattice
Author(s) -
Snehanshu Pal,
D. N. Bose
Publication year - 1994
Publication title -
bulletin of materials science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.35
H-Index - 72
eISSN - 0973-7669
pISSN - 0250-4707
DOI - 10.1007/bf02757580
Subject(s) - materials science , condensed matter physics , magnetoresistance , anisotropy , electrical resistivity and conductivity , thermal conduction , superlattice , scattering , hall effect , stacking , seebeck coefficient , semiconductor , quantum tunnelling , variable range hopping , thermal conductivity , optoelectronics , magnetic field , nuclear magnetic resonance , optics , physics , quantum mechanics , composite material , electrical engineering , engineering
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