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Heteroepitaxial growth of III–V compound semiconductors for optoelectronic devices
Author(s) -
Takashi Egawa,
Hiroyasu Ishikawa,
T. Jimbo,
M. Umeno
Publication year - 1999
Publication title -
bulletin of materials science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.35
H-Index - 72
eISSN - 0973-7669
pISSN - 0250-4707
DOI - 10.1007/bf02749943
Subject(s) - materials science , optoelectronics , metalorganic vapour phase epitaxy , mesfet , chemical vapor deposition , transconductance , electroluminescence , diode , double heterostructure , heterojunction , substrate (aquarium) , field effect transistor , epitaxy , transistor , semiconductor laser theory , nanotechnology , voltage , electrical engineering , oceanography , layer (electronics) , geology , engineering

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