Open AccessModeling of diffusion and oxidation in two dimensions during silicon device processing
Author(s) -
Preetam Singh,
B. K. Das
Publication year - 1999
Publication title -
bulletin of materials science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.35
H-Index - 72
eISSN - 0973-7669
pISSN - 0250-4707
DOI - 10.1007/bf02749942
Subject(s) - dopant , diffusion , materials science , vacancy defect , crystallographic defect , dimension (graph theory) , impurity , diffusion process , diffusion equation , point (geometry) , silicon , doping , thermodynamics , simulation , condensed matter physics , optoelectronics , computer science , physics , geometry , knowledge management , mathematics , innovation diffusion , service (business) , quantum mechanics , economy , pure mathematics , economics
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