Thickness dependent electrical properties of CdO thin films prepared by spray pyrolysis method
Author(s) -
L.C.S. Murthy,
K. Srinivasa Rao
Publication year - 1999
Publication title -
bulletin of materials science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.35
H-Index - 72
eISSN - 0973-7669
pISSN - 0250-4707
DOI - 10.1007/bf02745685
Subject(s) - materials science , sheet resistance , cadmium oxide , electrical resistivity and conductivity , crystallite , thin film , substrate (aquarium) , band gap , transmittance , grain boundary , grain size , analytical chemistry (journal) , charge carrier , composite material , impurity , microstructure , optoelectronics , nanotechnology , metallurgy , cadmium , layer (electronics) , oceanography , chemistry , chromatography , geology , electrical engineering , engineering , organic chemistry
A large number of thin films of cadmium oxide have been prepared on glass substrates by spray pyrolysis method. The prepared films have uniform thickness varying from 200-600 nm and good adherence to the glass substrate. A systematic study has been made on the influence of thickness on resistivity, sheet resistance, carrier concentration and mobility of the films. The resistivity, sheet resistance, carrier concentration and mobility values varied from 1.56-5.72 à 10-3 Ω-cm, 128-189 Ω/â¡, 1.6-3.9 à 1021 cm-3 and 0.3-3 cm2/Vs, respectively for varying film thicknesses. A systematic increase in mobility with grain size clearly indicates the reduction of overall scattering of charge carriers at the grain boundaries. The large concentration of charge carriers and low mobility values have been attributed to the presence of Cd as an impurity in CdO microcrystallites. Using the optical transmission data, the band gap was estimated and found to vary from 2.20-2.42 eV. These films have transmittance around 77 and average reflectance is below 2.6 in the spectral range 350-850 nm. The films are n-type and polycrystalline in nature. SEM micrographs of the CdO films were taken and the films exhibit clear grains and grain boundary formation at a substrate temperature as low as 523 K
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