Open AccessPreparation and characterisation of Cd3P2, a II–V group compound semiconductor
Author(s) -
D. Ramachandra Rao,
V Bagulasankrithyan,
R A Tewari
Publication year - 1985
Publication title -
bulletin of materials science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.35
H-Index - 72
eISSN - 0973-7669
pISSN - 0250-4707
DOI - 10.1007/bf02744258
Subject(s) - materials science , phosphide , cadmium , quartz , analytical chemistry (journal) , semiconductor , evaporation , electrical resistivity and conductivity , thin film , compound semiconductor , semiconductor materials , group (periodic table) , mineralogy , nuclear chemistry , metallurgy , composite material , metal , optoelectronics , nanotechnology , organic chemistry , chemistry , thermodynamics , physics , electrical engineering , epitaxy , layer (electronics) , engineering
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