Open AccessElectrical and structural characteristics of oxides grown from polycrystalline silicon
Author(s) -
B. B. Dixit,
P. D. Vyas,
W.S. Khokle,
K. Mahadevan,
H. N. Acharya
Publication year - 1986
Publication title -
bulletin of materials science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.35
H-Index - 72
eISSN - 0973-7669
pISSN - 0250-4707
DOI - 10.1007/bf02744137
Subject(s) - materials science , polysilicon depletion effect , polycrystalline silicon , silicon , doping , oxide , dielectric , dielectric strength , optoelectronics , engineering physics , voltage , composite material , metallurgy , electrical engineering , gate oxide , layer (electronics) , transistor , thin film transistor , engineering
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