Growth of polysilicon and silicide films for MOS-VLSI application
Author(s) -
Sumanshu Agarwal,
M. Bal,
G.D. Sharda,
M. Singh,
K K Laroia
Publication year - 1986
Publication title -
bulletin of materials science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.35
H-Index - 72
eISSN - 0973-7669
pISSN - 0250-4707
DOI - 10.1007/bf02744136
Subject(s) - materials science , polysilicon depletion effect , polycrystalline silicon , silicide , microelectronics , annealing (glass) , silicon , optoelectronics , doping , diffraction , nanotechnology , metallurgy , thin film transistor , electrical engineering , optics , transistor , layer (electronics) , voltage , physics , engineering , gate oxide
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