Electrical properties of polycrystalline silicon and zinc oxide semiconductors
Author(s) -
Simranjit Singh,
Suman Kumari,
B. K. Das
Publication year - 1984
Publication title -
bulletin of materials science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.35
H-Index - 72
eISSN - 0973-7669
pISSN - 0250-4707
DOI - 10.1007/bf02743900
Subject(s) - materials science , polycrystalline silicon , grain boundary , varistor , silicon , crystallite , ceramic , photoelectric effect , zinc , semiconductor , optoelectronics , engineering physics , metallurgy , composite material , electrical engineering , thin film transistor , microstructure , voltage , layer (electronics) , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom