Effect of 80 keV Ar+ implantation on the properties of pulse laser deposited magnetite (Fe3O4) thin films | Zendy

U. D. Lanke | Zendy

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Effect of 80 keV Ar+ implantation on the properties of pulse laser deposited magnetite (Fe3O4) thin films

Author(s) -

U. D. Lanke

Publication year - 2001

Publication title -

bulletin of materials science

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.35

H-Index - 72

eISSN - 0973-7669

pISSN - 0250-4707

DOI - 10.1007/bf02704837

Subject(s) - materials science , ion , thin film , pulsed laser deposition , diffraction , analytical chemistry (journal) , charge ordering , ion implantation , laser ablation , laser , nanotechnology , charge (physics) , optics , chemistry , physics , chromatography , quantum mechanics

Highly oriented thin films of Fe3O4 were deposited on (100) LaAlO3 substrates by pulsed laser ablation. The structural quality of the films was confirmed by X-ray diffraction (XRD). The films showed a Verwey transition near 120 K. The films were subjected to 80 keV Ar+ implantation at different ion doses up to a maximum of 6 x 10(14) ions/cm(2). Ion beam induced modifications in the films were investigated using XRD and resistance vs temperature measurements. Implantation decreases the change in resistance at 120 K and this effect saturates beyond 3 x 10(14) ions/cm(2). The Yerwey transition temperature, T-v, shifts towards lower temperatures with increase in ion dose

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