Open AccessExperimental f″ of As at 170, 200, 250 and 300 K from the Bijvoet pairs of GaAs
Author(s) -
G. Raja Sudha,
K. Vimala Devi,
D. Arthi,
S. Prasanna Subramanian,
N. Srinivasan,
R. Saravanan
Publication year - 2002
Publication title -
bulletin of materials science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.35
H-Index - 72
eISSN - 0973-7669
pISSN - 0250-4707
DOI - 10.1007/bf02704126
Subject(s) - materials science , gallium arsenide , dispersion (optics) , arsenide , atom (system on chip) , condensed matter physics , work (physics) , crystal (programming language) , crystal structure , crystallography , optics , physics , thermodynamics , optoelectronics , chemistry , programming language , computer science , embedded system
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