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A Conforming Exponentially Fitted Finite Element Scheme for the Semiconductor Continuity Equations in 3D
Author(s) -
Angermann L.,
Wang S.
Publication year - 2001
Publication title -
zamm ‐ journal of applied mathematics and mechanics / zeitschrift für angewandte mathematik und mechanik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.449
H-Index - 51
eISSN - 1521-4001
pISSN - 0044-2267
DOI - 10.1002/zamm.200108115150
Subject(s) - finite element method , mathematics , mathematical analysis , exponential growth , piecewise , exponential function , tetrahedron , piecewise linear function , convection–diffusion equation , basis function , extended finite element method , mixed finite element method , flux (metallurgy) , diffusion , geometry , physics , quantum mechanics , materials science , metallurgy , thermodynamics
The paper presents an exponentially fitted tetrahedral finite element method for the decoupled continuity equations in the drift‐diffusion model of semiconductor devices. This finite element method is based on a set of piecewise exponential basis functions constructed on a tetrahedral mesh. Error estimates for the approximate solution and its associated flux are given, where the error bounds depend on some first‐order seminorms of the exact solution, the exact flux and the coefficient function of the convection terms.