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Runaway Phenomena and Fluid Approximation Under High Fields in Semiconductor Kinetic Theory
Author(s) -
Poupaud F.
Publication year - 1992
Publication title -
zamm ‐ journal of applied mathematics and mechanics / zeitschrift für angewandte mathematik und mechanik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.449
H-Index - 51
eISSN - 1521-4001
pISSN - 0044-2267
DOI - 10.1002/zamm.19920720813
Subject(s) - boltzmann equation , electric field , collision frequency , homogeneous , limit (mathematics) , collision , physics , bounded function , boltzmann constant , semiconductor , kinetic theory , kinetic energy , perturbation theory (quantum mechanics) , perturbation (astronomy) , statistical physics , quantum electrodynamics , classical mechanics , mathematical analysis , mathematics , quantum mechanics , theoretical physics , plasma , computer science , computer security
The problem of existence of homogeneous stationary solutions of the semiconductor Boltzmann equation is studied. We give a classification of the results according to the behaviour of the collision frequency for high velocities. We underline the case where a critical value of the electric field appears. When the collision frequency is bounded from below, these results allow to derive a fluid approximation of the kinetic equation. It is obtained as a limit of a perturbation which is convenient for high electric fields.