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Well Oriented ZnO Nanorods Array: Negative Resistance and Optical Switching
Author(s) -
Rahmati Ali,
Yousefi Maryam
Publication year - 2017
Publication title -
zeitschrift für anorganische und allgemeine chemie
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.354
H-Index - 66
eISSN - 1521-3749
pISSN - 0044-2313
DOI - 10.1002/zaac.201700105
Subject(s) - wurtzite crystal structure , materials science , nanorod , raman spectroscopy , annealing (glass) , scanning electron microscope , spectroscopy , optoelectronics , analytical chemistry (journal) , nanotechnology , zinc , optics , composite material , chemistry , physics , chromatography , quantum mechanics , metallurgy
Well‐oriented ZnO nanorods (NRs) arrays were grown on Si, alumina, quartz, and FTO substrates through a ZnO seed layer followed by low temperature wet chemical process. The influence of sputtered ZnO seed layer thickness (100, 50, 32, and 16 nm), annealing temperature and CuO x coverage on the characteristics of ZnO NRs were investigated in this study. The crystalline structural, chemical, morphological, optical, and electrical properties of ZnO NRs arrays were studied by X‐ray diffraction (XRD), field emission‐ scanning electron microscopy equipped by energy dispersive X‐ray spectroscopy (FE‐SEM/EDX), Raman scattering, UV/Vis ‐ near IR absorption spectroscopy and current‐voltage characteristic. XRD and Raman spectra measurement revealed that the synthesize ZnO displayed hexagonal wurtzite structure. The individual rod diameter, density, and orientation can be controlled by varying the seed layer thickness. The mean diameter and maximum length of ZnO NRs are around 55–66 nm and 282 nm, respectively. ZnO NRs/ ZnO thin film structure shows optical switching and negative differential resistance behavior as applicable to ON/OFF gate and memory devices.