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Recent Advances in Manganese Doped II‐VI Semiconductor Quantum Dots
Author(s) -
Pandey Anshu,
Sarma Dipankar Das
Publication year - 2016
Publication title -
zeitschrift für anorganische und allgemeine chemie
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.354
H-Index - 66
eISSN - 1521-3749
pISSN - 0044-2313
DOI - 10.1002/zaac.201600368
Subject(s) - manganese , doping , quantum dot , dopant , materials science , semiconductor , magnetic semiconductor , nanotechnology , optoelectronics , metallurgy
The introduction of dopants into II‐VI semiconductor quantum dots (QDs) allows for the realization of materials with novel electro‐optical properties. Motivated by its vast potential applications, Manganese doping into II‐VI semiconductor QDs has been studied by several groups. Studies have focused on applications of manganese doped QDs as phosphors, diluted magnetic semiconductors as well as more recently their potential in light harvesting. Herein we review recent advances in understanding the emissive properties and electronic structure of Mn doped QDs. We survey synthetic approaches that have been proposed as well as advantages and disadvantages of conventional approaches to Mn doping. In particular, we discuss the advantages of reduced self‐absorption, as well as the problem of emission tunability. Effects of pressure on manganese emission are discussed. We then summarize recent efforts to tune Mn emission by generating pressure and strain in nanostructured QDs.