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Synthesis, Crystal Structure, and Optical Property of the Quaternary Semiconductor La 4 Cd 4 In 2 S 13
Author(s) -
Zhao HuaJun
Publication year - 2015
Publication title -
zeitschrift für anorganische und allgemeine chemie
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.354
H-Index - 66
eISSN - 1521-3749
pISSN - 0044-2313
DOI - 10.1002/zaac.201500211
Subject(s) - isostructural , octahedron , crystallography , tetrahedron , materials science , crystal structure , stoichiometry , diffuse reflection , sulfide , metal , chemistry , physics , optics , metallurgy
The sulfide La 4 Cd 4 In 2 S 13 in the quaternary RE / M / N / Q ( RE = rare‐earth metal; M = Zn, Cd; N = Ga, In; Q = chalcogenides) system was prepared from stoichiometric mixtures of the elements by solid‐state reactions at 1223 K in an evacuated silica tube. The La 4 Cd 4 In 2 S 13 , crystallizing in the Pbam space group, is isostructural with Pb 4 Bi 4 In 2 S 13 . The structure of La 4 Cd 4 In 2 S 13 consists of double chains of CdS 6 octahedra extending along [001] direction that are interconnected by single chains of InS 6 octahedra by edge‐sharing into 1D ribbons. These ribbons are further fused by the infinite one‐dimensional chains of InS 4 tetrahedra by corner‐sharing into Z‐shaped [Cd 4 In 2 S 13 ] 12– layers perpendicular to the b direction separated by the La 3+ ions. UV/Vis/NIR diffuse reflectance spectroscopy study shows its optical gap of around 2.27 eV.