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Synthesis, Characterization, Thermal Property of Si(c‐C 5 H 9 NH) 4 and Its Potential as CVD Precursor for SiC Film
Author(s) -
Du Liyong,
Chu Wenxiang,
Miao Hongyan,
Wang Dawei,
Xu Chongying,
Ding Yuqiang
Publication year - 2015
Publication title -
zeitschrift für anorganische und allgemeine chemie
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.354
H-Index - 66
eISSN - 1521-3749
pISSN - 0044-2313
DOI - 10.1002/zaac.201500143
Subject(s) - chemical vapor deposition , x ray photoelectron spectroscopy , silicon , thermal stability , materials science , analytical chemistry (journal) , volatility (finance) , raman spectroscopy , x ray crystallography , characterization (materials science) , diffraction , chemical engineering , nanotechnology , chemistry , organic chemistry , metallurgy , physics , optics , economics , financial economics , engineering
Silicon(IV) amide Si(c‐C 5 H 9 NH) 4 ( 1 ), was synthesized and characterized by 1 H, 13 C, and 29 Si NMR spectroscopy, EI‐MS, elemental analysis, and X‐ray diffraction. Its thermal stability and volatility were also investigated. The as‐grown film, which was characterized by SEM, AFM, XRD and XPS, was deposited using 1 as single precursor through a low‐pressure chemical vapor deposition (LPCVD) process at a temperature as low as 600 °C. The results demonstrated that silicon(IV) amides can be promising single‐precursor for deposition of low‐temperature SiC films.