Hexacarbonyl (Trimethylsilyl Ethyne) Dicobalt as MOCVD Precursor for Thin Cobalt Layer Formation

The low melting Co 0 source [Co 2 (CO) 6 (η 2 ‐Me 3 SiC≡CH)] ( 3 ) was prepared as a precursor system for the metal‐organic chemical vapor deposition (MOCVD) of cobalt. The synthesis of 3 was realized by the reaction of trimethylsilyl acetylene ( 2 ) with dicobalt octacarbonyl ( 1 ) in n ‐hexane at ambient temperature. Vapor pressure measurements and TG‐MS analysis were performed revealing the suitability of 3 in the CVD process. Cobalt layers formed in a vertical cold wall CVD reactor were characterized by SEM, EDX, and XPS. The appropriate metallic films consist of a mixture of cobalt and cobalt oxide.