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Hexacarbonyl (Trimethylsilyl Ethyne) Dicobalt as MOCVD Precursor for Thin Cobalt Layer Formation
Author(s) -
Georgi Colin,
Hildebrandt Alexander,
Tuchscherer André,
Oswald Steffen,
Lang Heinrich
Publication year - 2013
Publication title -
zeitschrift für anorganische und allgemeine chemie
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.354
H-Index - 66
eISSN - 1521-3749
pISSN - 0044-2313
DOI - 10.1002/zaac.201300292
Subject(s) - cobalt , chemical vapor deposition , metalorganic vapour phase epitaxy , trimethylsilyl , metal , layer (electronics) , acetylene , materials science , x ray photoelectron spectroscopy , oxide , cobalt oxide , chemistry , inorganic chemistry , chemical engineering , organic chemistry , nanotechnology , metallurgy , epitaxy , engineering
The low melting Co 0 source [Co 2 (CO) 6 (η 2 ‐Me 3 SiC≡CH)] ( 3 ) was prepared as a precursor system for the metal‐organic chemical vapor deposition (MOCVD) of cobalt. The synthesis of 3 was realized by the reaction of trimethylsilyl acetylene ( 2 ) with dicobalt octacarbonyl ( 1 ) in n ‐hexane at ambient temperature. Vapor pressure measurements and TG‐MS analysis were performed revealing the suitability of 3 in the CVD process. Cobalt layers formed in a vertical cold wall CVD reactor were characterized by SEM, EDX, and XPS. The appropriate metallic films consist of a mixture of cobalt and cobalt oxide.