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GeSb 4 Te 4 – a New 9 P ‐Type Phase in the System Ge/Sb/Te
Author(s) -
Schneider Matthias N.,
Oeckler Oliver
Publication year - 2010
Publication title -
zeitschrift für anorganische und allgemeine chemie
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.354
H-Index - 66
eISSN - 1521-3749
pISSN - 0044-2313
DOI - 10.1002/zaac.200900453
Subject(s) - antimony , stoichiometry , germanium , annealing (glass) , phase diagram , telluride , crystallography , electrical resistivity and conductivity , materials science , lead telluride , single crystal , homogeneous , analytical chemistry (journal) , crystal structure , type (biology) , phase (matter) , chemistry , silicon , doping , metallurgy , physics , thermodynamics , ecology , biology , optoelectronics , organic chemistry , chromatography , quantum mechanics
9 P ‐GeSb 4 Te 4 is a new germanium antimony telluride that can be obtained from the elements as a homogeneous phase by quenching a stoichiometric melt and subsequently annealing the sample at 500 °C. The crystal structure consists of alternating antimony layers similar to those in elemental antimony and rocksalt‐type blocks similar to those in GeSb 2 Te 4 . Although not thermodynamically stable according to the phase diagram, GeSb 4 Te 4 is remarkably stable up to 540 °C, where it starts to melt incongruently according to DSC and DTA measurements. The crystal structure has been refined from single‐crystalX‐ray data [ P $\bar{3}$ m 1, a = 4.2466(2) Å, c = 17.483 Å, R 1 = 0.0355]. Its diffraction patterns are very similar to those of other 9 P ‐type tellurides like Ge 2 Sb 2 Te 5 and Sb 2 Te, which tend to occur as very pronounced false minima in structure refinements. The electrical conductivity is low (33 S · cm –1 ) but exhibits metallic temperature dependence.