z-logo
Premium
Electronic Structure and Physical Properties of Hf 5 Sb 9 containing a Unique T Net of Sb Atoms
Author(s) -
Xu Jianxiao,
Kleinke Katja M.,
Kleinke Holger
Publication year - 2008
Publication title -
zeitschrift für anorganische und allgemeine chemie
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.354
H-Index - 66
eISSN - 1521-3749
pISSN - 0044-2313
DOI - 10.1002/zaac.200800288
Subject(s) - antimonide , antimony , atom (system on chip) , net (polyhedron) , crystallography , materials science , electronic structure , chemistry , computational chemistry , metallurgy , geometry , mathematics , computer science , embedded system
Hf 5 Sb 9 was the first and thus far only example of an inorganic material that contains a pure T net, i.e. a planar layer of three‐bonded Sb atoms. It crystallizes in a super structure of the ZrSiS type, wherein the originally square layers are diluted and deformed to form said T net. Each Sb atom of this net, labeled Sb3, is connected to three symmetry equivalent Sb atoms at distances of about 3Å, reminiscent of molecular T examples such as BrF 3 . According to electronic structure calculations, these three Sb3–Sb3 interactions correspond to medium strong bonds. Hf 5 Sb 9 is a high‐temperature antimonide that decomposes slowly under formation of HfSb 2 at intermediate temperatures such as 750 °C, while it can be stored literally for years at room temperature. Like all other studied binary hafnium antimonides, Hf 5 Sb 9 is metallic with a small Seebeck coefficient.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom