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[(Me 3 Si) 2 N] 3 Lu: Molecular Structure and Use as Lu and Si Source for Atomic Layer Deposition of Lu Silicate Films
Author(s) -
Scarel G.,
Wiemer C.,
Fanciulli M.,
Fedushkin I. L.,
Fukin G. K.,
Domrachev G. A.,
Lebedinskii Y.,
Zenkevich A.,
Pavia G.
Publication year - 2007
Publication title -
zeitschrift für anorganische und allgemeine chemie
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.354
H-Index - 66
eISSN - 1521-3749
pISSN - 0044-2313
DOI - 10.1002/zaac.200700223
Subject(s) - lutetium , silicate , thermal decomposition , deposition (geology) , atomic layer deposition , tungsten , analytical chemistry (journal) , decomposition , crystallography , materials science , chemistry , thin film , mineralogy , nanotechnology , metallurgy , geology , oxide , organic chemistry , paleontology , sediment , yttrium
The molecular structure of tris[bis(trimethylsilyl)amido]lutetium, [(Me 3 Si) 2 N] 3 Lu, is investigated. An agostic interaction is found between Lu and the Si atom of the silyl group. The performance of [(Me 3 Si) 2 N] 3 Lu as precursor to deposit Lu silicate layers by atomic layer deposition using either H 2 O or O 3 as oxygen source is studied. Si incorporation in the films is revealed: [(Me 3 Si) 2 N] 3 Lu thermal decomposition and the mentioned agostic interaction contribute both to the phenomenon. [(Me 3 Si) 2 N] 3 Lu thermal decomposition also affects the growth rate of films deposited using H 2 O. The growth rate of films deposited using O 3 , especially at growth temperatures < 300 °C, is extremely high, probably because of the hydrogen atoms existing in [(Me 3 Si) 2 N] 3 Lu.
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