z-logo
Premium
A Molecular Dynamics Simulation Study of (OH − ) Schottky Defects in Hydroxyapatite
Author(s) -
Zahn Dirk,
Hochrein Oliver
Publication year - 2005
Publication title -
zeitschrift für anorganische und allgemeine chemie
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.354
H-Index - 66
eISSN - 1521-3749
pISSN - 0044-2313
DOI - 10.1002/zaac.200400529
Subject(s) - schottky diode , molecular dynamics , ion , activation energy , materials science , hydroxide , arrhenius plot , crystal (programming language) , crystallography , diffusion , analytical chemistry (journal) , chemistry , inorganic chemistry , computational chemistry , thermodynamics , physics , optoelectronics , diode , chromatography , computer science , programming language , organic chemistry
The dynamics of (OH − ) Schottky defects is investigated for a hydroxyapatite / vacuum interface and in the bulk crystal. From our molecular dynamics simulations the mechanism of such defect translocation is identified. The hydroxide ions are arranged in [001] channels formed by staggered triangles of calcium ions. Above 200 °C, the OH − ions start to invert their orientation by passing through the surrounding Ca 2+ triangle. In the neighborhood of an empty calcium triangle, the OH − orientation inversion may also occur by hydroxide ion translocation from the occupied to the unoccupied calcium triangle. The later process causes the hydroxide to jump by c/2 ≈ ±3.5Å along the [001] direction. From an Arrhenius plot the activation energy of (OH − ) Schottky defect diffusion in the bulk crystal was found as 73 kJ mol −1 . At the hydroxyapatite/vacuum interface, OH − defect sintering exhibited a preference of Schottky defects diffusion to the surface.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom