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Vanadium Nitride Films Formed by Rapid Thermal Processing (RTP): Depth Profiles and Interface Reactions Studied by Complementary Analytical Techniques
Author(s) -
Berendes A.,
Galesic I.,
Mertens R.,
Bock W.,
Oechsner H.,
Warbichler P.,
Hofer F.,
Theodossiu E.,
Baumann H.,
Kolbesen B. O.
Publication year - 2003
Publication title -
zeitschrift für anorganische und allgemeine chemie
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.354
H-Index - 66
eISSN - 1521-3749
pISSN - 0044-2313
DOI - 10.1002/zaac.200300128
Subject(s) - vanadium nitride , rutherford backscattering spectrometry , silicon oxynitride , analytical chemistry (journal) , materials science , nuclear reaction analysis , nitride , transmission electron microscopy , vanadium , electron energy loss spectroscopy , diffusion barrier , silicon nitride , diffusion , silicon , thin film , layer (electronics) , chemistry , nanotechnology , metallurgy , ion , physics , organic chemistry , chromatography , thermodynamics
The nitridation of vanadium films in molecular nitrogen and ammonia using a RTP‐system was investigated. The V films were deposited on silicon substrates covered by 100 nm thermal SiO 2 . For a few experiments sapphire substrates were used. Nitride formation at high temperatures (900 and 1100 °C) and interface reactions and diffusion of oxygen out of the SiO 2 ‐layer into the metal lattice at moderate temperatures (600 and 700 °C) were studied. For characterisation complementary analytical methods were used: X‐ray diffraction (XRD) for phase analysis, secondary neutral mass spectrometry (SNMS) and Rutherford Backscattering (RBS) for acquisition of depth profiles of V, N, O, C and Si, transmission electron microscopy (TEM) in combination with electron energy filtering for imaging element distributions (EFTEM) and recording electron energy loss spectra (EELS) to obtain detailed information about the initial stages of nitride, oxide and oxynitride formation, respectively, and the microstructure and element distributions of the films. In these experiments the SiO 2 ‐layer acts as diffusion barrier for nitrogen and source for oxygen causing the formation of substoichiometric vanadium oxides and oxynitrides near the V/SiO 2 ‐interface primarily at temperatures ≤ 900 °C. At a temperature of 1100 °C just a small amount of oxynitride forms near the interface because rapid diffusion of nitrogen and fast formation of VN (diffusion barrier for oxygen) inhibit the outdiffusion of oxygen into the metal layer. In the 600 °C regime, in argon atmosphere oxynitride phases observed in the surface region of these films originate from reaction of residual oxygen in the argon gas, whereas NH 3 as process gas does not lead to oxide or oxynitride formation at the surface (apart from the oxidation caused by storage). NH 3 seems to support the diffusion of oxygen out of the SiO 2 ‐layer. During the decomposition of ammonia at higher temperatures hydrogen is formed, which could attack the SiO 2 . In contrast, sapphire substrates do not act as oxygen source in the 600 °C regime and change the nitridation behaviour of the vanadium films.