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Nitridation of V 5 Al 8 films with NH 3 by Rapid Thermal Processing (RTP)
Author(s) -
Lewalter H.,
Kolbesen B. O.
Publication year - 2003
Publication title -
zeitschrift für anorganische und allgemeine chemie
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.354
H-Index - 66
eISSN - 1521-3749
pISSN - 0044-2313
DOI - 10.1002/zaac.200300119
Subject(s) - materials science , reflectometry , analytical chemistry (journal) , scanning electron microscope , sapphire , nitride , layer (electronics) , x ray reflectivity , sputtering , rapid thermal processing , thin film , silicon , nanotechnology , metallurgy , chemistry , optics , composite material , laser , physics , chromatography , computer science , computer vision , time domain
V 5 Al 8 films (thickness about 100 nm) were deposited on sapphire substrates by RF‐sputtering and nitridated with NH 3 at 600‐1250 °C (1 min) in a RTP system. The as deposited and nitridated films were investigated by ESCA (electron spectroscopy for chemical analysis), XRD (X‐ray diffraction), XRR (X‐ray reflectometry), AFM (atomic force microscopy) and SEM (scanning electron microscopy). Formation of an aluminum nitride layer at the surface and precipitation of V(Al) in the bulk was found. In the temperature regime from 600 °C to 900 °C a considerable amount of oxygen is incorporated in the aluminum nitride layer. The roughness of the surface increased with increasing temperature and at 1250 °C a partially detaching of the AlN layer could be observed.