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Some Factors Influencing Metal‐Insulator Transitions
Author(s) -
Burdett Jeremy K.,
Gramsch Stephen A.,
Smith Luis
Publication year - 1996
Publication title -
zeitschrift für anorganische und allgemeine chemie
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.354
H-Index - 66
eISSN - 1521-3749
pISSN - 0044-2313
DOI - 10.1002/zaac.19966221008
Subject(s) - metal–insulator transition , condensed matter physics , metal , valence (chemistry) , valence band , insulator (electricity) , materials science , mott insulator , distortion (music) , rare earth , transition metal , electronic structure , physics , chemistry , band gap , quantum mechanics , metallurgy , amplifier , biochemistry , optoelectronics , cmos , catalysis
Three problems are studied. (i) The optimal shape of the electronic densities of states of metal and gapped insulator related by a geometrical distortion, for a temperature induced transition between them. (ii) The dependence of valence band width on cation identity and the temperature of the metal Mott‐Hubbard insulator transition in the series RENiO 3 (RE = Rare Earth). (iii) Electronic insights into the loss of a Jahn‐Teller distortion at Mn during the insulator‐metal transition in La 1−x Sr x MnO 3 as x increases but not at Cu for La 2−x Sr x CuO 4 .