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Electrical properties and valence band structure of GeSe x Te 1−x single crystals
Author(s) -
Ge Y. R.,
Wiedemeier H.
Publication year - 1993
Publication title -
zeitschrift für anorganische und allgemeine chemie
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.354
H-Index - 66
eISSN - 1521-3749
pISSN - 0044-2313
DOI - 10.1002/zaac.19936190128
Subject(s) - trigonal crystal system , valence (chemistry) , valence band , condensed matter physics , materials science , lattice (music) , atmospheric temperature range , crystallography , crystal structure , band gap , chemistry , physics , thermodynamics , organic chemistry , acoustics
The anomalous composition dependence of the carrier transport properties of Ge 1−y (Se 0.2 Te 0.8 ) y in the range y=0.495 − 0.510 has been analyzed at room temperature by means of a two‐carrier model. The close agreement between the experimental and computational results confirms the existence of two valence bands in α‐GeSe x Te 1−x which are produced by the rhombohedral distortion of the lattice at low temperature.

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