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Electrophysical properties of GeSe x Te 1−x single crystals grown by physical vapor transport (PVT)
Author(s) -
Wiedemeier H.,
Ge Y. R.
Publication year - 1993
Publication title -
zeitschrift für anorganische und allgemeine chemie
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.354
H-Index - 66
eISSN - 1521-3749
pISSN - 0044-2313
DOI - 10.1002/zaac.19936190127
Subject(s) - electrical resistivity and conductivity , materials science , stoichiometry , hall effect , germanium , electron mobility , seebeck coefficient , degenerate semiconductor , semiconductor , lattice constant , conductivity , analytical chemistry (journal) , condensed matter physics , chemistry , thermal conductivity , silicon , optoelectronics , physics , optics , chromatography , diffraction , electrical engineering , composite material , engineering
The room temperature composition dependences of the lattice parameters, mass density, thermopower, Hall constant, carrier concentration and mobility, and electrical conductivity of GeSe x Te 1−x (x=0.1 − 0.4) single crystals grown by the Physical Vapor Transport (PVT) method, indicate that the crystals are non‐stoichiometric degenerate semiconductors having p‐type conductivity. The main lattice defects in this compound are germanium vacancies. The effects of selenium content on the electrical properties of GeSe x Te 1−x single crystals are explained qualitatively based on the character of the energy levels and on the non‐stoichiometric property of this compound.