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Structure and electronic transport properties of the Misfit layer compound (LaSe) 1.14 (NbSe 2 ) 2 , „LaNb 2 Se 5 ”︁
Author(s) -
Roesky R.,
Meerschaut A.,
Rouxel J.,
Chen J.
Publication year - 1993
Publication title -
zeitschrift für anorganische und allgemeine chemie
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.354
H-Index - 66
eISSN - 1521-3749
pISSN - 0044-2313
DOI - 10.1002/zaac.19936190119
Subject(s) - stacking , crystal structure , layer (electronics) , electrical resistivity and conductivity , superconductivity , crystallography , chemistry , sequence (biology) , crystal (programming language) , condensed matter physics , materials science , physics , nanotechnology , computer science , organic chemistry , quantum mechanics , biochemistry , programming language
The new misfit layer compound (LaSe) 1.14 (NbSe 2 ) 2 has been synthesized from the elements at 1050‐ and its structure has been determined by a composite approach. The structure has an alternating stacking sequence of [LaSe] and two [NbSe 2 ] layers along the c direction. The misfit of the two different layers is occurring along the a direction: a 1 (LaSe)=6.0191 Å and a 2 (NbSe 2 )=3.4372 Å therefore yielding a ratio of 1.751 which is very close to 7/4. An investigation of electrical resistivity was done. The crystal shows superconducting properties at 5.3 K.