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Crystal Growth of Chromium Silicides by chemical vapour transport with halogens. 2. Growth of the Cr‐rich silicide crystals
Author(s) -
Krausze R.,
Khristov M.,
Peshev P.,
Krabbes G.
Publication year - 1990
Publication title -
zeitschrift für anorganische und allgemeine chemie
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.354
H-Index - 66
eISSN - 1521-3749
pISSN - 0044-2313
DOI - 10.1002/zaac.19905880116
Subject(s) - chromium , bromine , halogen , dissolution , silicide , materials science , chemical vapor deposition , chlorine , deposition (geology) , phase (matter) , crystal growth , silicon , inorganic chemistry , analytical chemistry (journal) , crystallography , metallurgy , chemistry , nanotechnology , organic chemistry , paleontology , alkyl , chromatography , sediment , biology
Chromium silicides with Cr:Si ≥ 1, CrSi, Cr 5 Si 3 , and Cr 3 Si, were grown by C.V.T. with halogens as transport medium. A sequential transport behaviour is typical in the multiphase CrSi system. Using chlorine and bromine as transport agent a transport from hot to cold has been observed. CrSi can be obtained only with Br 2 or I 2 due to the subsequent transport, which causes CrSi 2 to be grown with Cl 2 even if the source material is a CrSi/Cr 5 Si 3 mixture. Using iodine as transport agent a transport from cold to hot was found in each case. The dissolution and the deposition processes of the solids are discussed taking into account the composition of the gas phase. There is a good agreement between the thermodynamic analysis and the results of the experiments.