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The System Ga 2 S 3 Pr 2 O 3
Author(s) -
Bakhtiyarov I. B.,
Mamedov A. N.,
Abbasov M. M.
Publication year - 1987
Publication title -
zeitschrift für anorganische und allgemeine chemie
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.354
H-Index - 66
eISSN - 1521-3749
pISSN - 0044-2313
DOI - 10.1002/zaac.19875450223
Subject(s) - eutectic system , differential thermal analysis , phase diagram , diffraction , solubility , melting temperature , materials science , thermodynamics , indentation hardness , congruent melting , diagram , crystallography , analytical chemistry (journal) , chemistry , physics , microstructure , mathematics , phase (matter) , optics , statistics , organic chemistry , chromatography , composite material
The diagram of state of Ga 2 S 3 Pr 2 O 3 has been investigated by the methods of differential thermal, high‐temperature differential thermal, X‐ray diffraction, microstructural and thermodynamic analyses and by measurement of microhardness of the samples. It has been found that the system is eutectic, the solubility on the part of Ga 2 S 3 at 295 K reaches 8 mol.%. In the system the existence of one incongruently‐melting compound of Ga 2 S 3 · 2 Pr 2 O 3 was found.