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Influence of the donor density on the photoelectrochemical properties of the magnetoplumbite PbFe 12 O 19
Author(s) -
Doumerc J. P.,
Pollert E.,
Hejtmanek J.
Publication year - 1986
Publication title -
zeitschrift für anorganische und allgemeine chemie
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.354
H-Index - 66
eISSN - 1521-3749
pISSN - 0044-2313
DOI - 10.1002/zaac.19865400922
Subject(s) - depletion region , shallow donor , schottky diode , condensed matter physics , doping , electron , schottky barrier , quantum tunnelling , chemistry , materials science , layer (electronics) , physics , nanotechnology , optoelectronics , diode , quantum mechanics
Influence of the donor density N D on photoelectrochemical properties has been investigated on single crystals of pure and Ti or Sm‐doped PbFe 12 O 19 . Apparently due to a large enough value of the Helmholtz layer capacitance C H the intersection of Mott‐Schottky plots U 0 with the potential axis does not vary with N D and the flat band potential can be taken equal to U 0 . The deviations from linear dependence observed for Mott‐Schottky plots are ascribed to a gradual ionization of shallow and deep donors. The present investigation finally leads to an electron affinity of EA = 4.1 ± 0.2 eV. The evolution with N D of the I–U characteristics in the darkness may be explained by an increase of tunneling probability with N D while under illumination it may be attributed to the variations of two competing parameters: width of the space layer and magnitude of the electrical field at the interface.