Premium
Thermochemical Properties and Vapor Growth of Hg 1‐x Cd x Te on CdTe
Author(s) -
Wiedemeier H.,
Uzpurvis A. E.
Publication year - 1984
Publication title -
zeitschrift für anorganische und allgemeine chemie
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.354
H-Index - 66
eISSN - 1521-3749
pISSN - 0044-2313
DOI - 10.1002/zaac.19845100328
Subject(s) - cadmium telluride photovoltaics , ternary operation , vapor phase , epitaxy , analytical chemistry (journal) , substrate (aquarium) , materials science , chemistry , crystallography , thermodynamics , nanotechnology , physics , environmental chemistry , geology , oceanography , layer (electronics) , computer science , programming language
Based on a thermodynamic analysis, the vapor phase of the Hg 1‐x Cd x Te—HgI 2 —CdTe epitaxy system consists predominantly of Hg(g) and HgI 2 (g) through which nutrient species migrate from the source to the CdTe substrate. Growth experiments in the 590° → 535°C temperature gradient showed that Hg 1‐x Cd x Te layers can be grown on CdTe substrates using a preannealed, ternary source material in the presence of HgI 2 .