Thermochemical Properties and Vapor Growth of Hg 1‐x Cd x  Te on CdTe | Zendy

Wiedemeier H. | Zendy; Uzpurvis A. E. | Zendy

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Thermochemical Properties and Vapor Growth of Hg 1‐x Cd x Te on CdTe

Author(s) -

Wiedemeier H.,

Uzpurvis A. E.

Publication year - 1984

Publication title -

zeitschrift für anorganische und allgemeine chemie

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.354

H-Index - 66

eISSN - 1521-3749

pISSN - 0044-2313

DOI - 10.1002/zaac.19845100328

Subject(s) - cadmium telluride photovoltaics , ternary operation , vapor phase , epitaxy , analytical chemistry (journal) , substrate (aquarium) , materials science , chemistry , crystallography , thermodynamics , nanotechnology , physics , environmental chemistry , geology , oceanography , layer (electronics) , computer science , programming language

Based on a thermodynamic analysis, the vapor phase of the Hg 1‐x Cd x Te—HgI 2 —CdTe epitaxy system consists predominantly of Hg(g) and HgI 2 (g) through which nutrient species migrate from the source to the CdTe substrate. Growth experiments in the 590° → 535°C temperature gradient showed that Hg 1‐x Cd x Te layers can be grown on CdTe substrates using a preannealed, ternary source material in the presence of HgI 2 .

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