z-logo
Premium
Crystal growth of SnO 2 and other MO 2 (M = Ti, Zr, Hf) oxides by flux of B 2 O 3 V 2 O 5 system
Author(s) -
Shimada S.,
Kodaira K.,
Matsushita T.
Publication year - 1980
Publication title -
zeitschrift für anorganische und allgemeine chemie
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.354
H-Index - 66
eISSN - 1521-3749
pISSN - 0044-2313
DOI - 10.1002/zaac.19804690119
Subject(s) - crystal (programming language) , materials science , impurity , vanadium , analytical chemistry (journal) , flux method , flux (metallurgy) , crystallography , crystal growth , boron , mineralogy , single crystal , chemistry , metallurgy , organic chemistry , chromatography , computer science , programming language
Single crystals of SnO 2 and MO 2 (M = Ti, Zr, Hf) oxide were grown from flux of B 2 O 3 V 2 O 5 system. Mixtures of the flux and the starting powder of Zn 2 SnO 4 , TiO 2 , ZrO 2 , or HfO 2 were soaked at a temperature of 1030–1340°C for 10–72 hr and then were cooled down to 900°C at a rate of 5°C/hr. Grown crystals of SnO 2 were pale brown needles. An increase in V 2 O 5 content of the flux (up to V 2 O 5 /B 2 O 3 ratio equal to 2) or in the soaking temperature increases the crystal size. A largest crystal with the size of 15.0 × 0.4 × 0.4 mm was obtained in the case of V 2 O 5 /B 2 O 3 = 2. Crystals of TiO 2 were black needles or platelets, and those of ZrO 2 and HfO 2 were yellowish, transparent needles or blocks. The maximum size of TiO 2 , ZrO 2 or HfO 2 crystal was 12.0 × 0.1 × 0.1 mm, 4.0 × 0.3 × 0.3 mm or 11.0 × 0.6 × 0.6 mm, respectively. The long axis of the crystals was all C‐axis and main faces on the crystals were of {100} and/or {110} families. All these crystals were found to include the impurities of boron and vanadium. The electrical resistivities of SnO 2 and TiO 2 crystals were measured to be 1.4 × 10 6 and 5.6 × 10 4 Ω · cm at 25°C, respectively.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom