Premium
The chemical transport rates and crystal Morphology of GeSe
Author(s) -
Wiedemeir H.,
Irene E. A.
Publication year - 1973
Publication title -
zeitschrift für anorganische und allgemeine chemie
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.354
H-Index - 66
eISSN - 1521-3749
pISSN - 0044-2313
DOI - 10.1002/zaac.19734000109
Subject(s) - diffusion , mass transport , materials science , morphology (biology) , flux (metallurgy) , crystal (programming language) , ampoule , analytical chemistry (journal) , thermodynamics , chemical physics , crystallography , chemistry , composite material , chromatography , physics , geology , engineering physics , paleontology , computer science , metallurgy , programming language
Mass transport rate studies on the system GeSeGeI 4 were performed in closed ampules of fused silica in the temperature gradients 520 → 420°C, 420 → 350°C and 380 → 300°C with GeI 4 pressures ranging from 0 to about 2 atm. The experimental results in terms of material flux versus GeI 4 pressure reveal the different transport modes in agreement with S CHÄFER'S transport models. Comparison of observed and computed material fluxes based on a diffusion model confirmed the transport reaction\documentclass{article}\pagestyle{empty}\begin{document}$${\rm GeSe(s) + GeI}_{\rm 4} {\rm (g)} = 2{\rm GeI}_{\rm 2} {\rm (g) + 1/2 Se}_{\rm 2} ({\rm g)}{\rm .}$$ \end{document}Diffusion controlled chemical transport yields single crystal platelets with (001) orientation of the as‐grown surfaces, in accordance with the structural properties of GeSe.