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Charge induction in semiconductor detectors with pixellated structure
Author(s) -
Samedov Victor V.
Publication year - 2007
Publication title -
x‐ray spectrometry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.447
H-Index - 45
eISSN - 1097-4539
pISSN - 0049-8246
DOI - 10.1002/xrs.956
Subject(s) - detector , semiconductor , charge (physics) , semiconductor detector , electrode , charge carrier , physics , resolution (logic) , optoelectronics , pixel , function (biology) , optics , computer science , quantum mechanics , artificial intelligence , evolutionary biology , biology
Considerable interest is now being attracted to the next generation of compound semiconductor detectors with pixellated structure in application to x‐ray and gamma‐astronomy, nuclear spectroscopy and nuclear medicine. The spatial resolution of this type of detectors is mainly determined by the process of charge induction by carriers on electrodes with pixellated structure. Ramo–Shockley's theorem that uses only the conservation‐of‐energy argument is not applicable to segmented electrodes since it gives only the total charge induced on the electrode, not a fraction that induced on a single pixel. In this work a method for finding the exact analytical solution for the Green function, the electric potential and the induced charge is proposed. This method is applicable to detectors with any real configuration of electrodes. Copyright © 2007 John Wiley & Sons, Ltd.