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Ultrasoft x‐ray reflection and emission spectroscopic analysis of Al 2 O 3 /Si structure synthesized by the atomic layer deposition method
Author(s) -
Filatova E. O.,
Taracheva E. Yu.,
Sokolov A. A.,
Bukin S. V.,
Shulakov A. S.,
Jonnard P.,
André J.M.,
Drozd V. E.
Publication year - 2006
Publication title -
x‐ray spectrometry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.447
H-Index - 45
eISSN - 1097-4539
pISSN - 0049-8246
DOI - 10.1002/xrs.919
Subject(s) - silicon , substrate (aquarium) , atomic layer deposition , layer (electronics) , materials science , reflection (computer programming) , amorphous solid , deposition (geology) , analytical chemistry (journal) , spectroscopy , atomic layer epitaxy , amorphous silicon , optoelectronics , crystallography , chemistry , crystalline silicon , nanotechnology , oceanography , computer science , biology , paleontology , chromatography , quantum mechanics , programming language , physics , sediment , geology
X‐ray reflection spectroscopy and x‐ray emission spectroscopy using electron excitation were used to characterize the 30 nm‐thick Al 2 O 3 film grown on a silicon substrate by atomic layer deposition (ALD). According to our investigations the film was amorphous and inhomogeneous in depth. The interfacial layer between film and substrate that was a mixed layer containing Al 2 O 3 , a large amount of the SiO 2 and elemental Si was evidenced. The concentration of SiO 2 increases as one approaches the Si(100) substrate interface because of the interdiffusion of the oxygen and silicon, followed by silicon oxidation. Copyright © 2006 John Wiley & Sons, Ltd.
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