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Structural, electrical and optical properties of Cd 1− x Zn x O thin films and alloying effects on Kβ/Kα intensity ratios
Author(s) -
Bacaksız E.,
Bolat S.,
Cevik U.,
Dogan O.,
Abay B.
Publication year - 2006
Publication title -
x‐ray spectrometry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.447
H-Index - 45
eISSN - 1097-4539
pISSN - 0049-8246
DOI - 10.1002/xrs.889
Subject(s) - materials science , intensity (physics) , thin film , optoelectronics , optics , nanotechnology , physics
Cd 1− x Zn x O thin films were prepared by spray pyrolysis in air atmosphere on a glass substrate at 250 °C. The Zn content in Cd 1− x Zn x O films was varied from x = 0 to 0.60. Structural, electrical and optical properties of Cd 1− x Zn x O films were investigated by x‐ray diffraction, electrical resistivity and optical transmittance spectra, respectively. As the Zn content in Cd 1− x Zn x O thin films increased, the preferred orientation of the films did not change, only the peak intensity of the planes decreased. In addition to the peaks of CdO, peaks of ZnO were observed in the film with x = 0.6. The resistivity of Cd 1− x Zn x O thin films increased with increasing Zn content. Transmittance spectra studies of films were carried out in the 190‐1100 nm wavelength range and the results showed that the bandgap energy range varied from 2.42 to 3.25 eV. In addition, alloying effect on the Kβ/Kα intensity ratio in Cd 1− x Zn x O semiconductor thin films was studied. It was found that the Kβ/Kα intensity ratio is changed by alloying effects in Cd 1− x Zn x O semiconductor thin films for different composition of x . The results were compared with the theoretical values. Copyright © 2006 John Wiley & Sons, Ltd.