Total electron yield of electrons emitted by x‐ray excitation from layered Al  x  Ga 1 −  x  As–GaAs structures | Zendy

Ebel Horst | Zendy; Svagera Robert | Zendy; Ebel Maria F. | Zendy

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Total electron yield of electrons emitted by x‐ray excitation from layered Al x Ga 1 − x As–GaAs structures

Author(s) -

Ebel Horst,

Svagera Robert,

Ebel Maria F.

Publication year - 2002

Publication title -

x‐ray spectrometry

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.447

H-Index - 45

eISSN - 1097-4539

pISSN - 0049-8246

DOI - 10.1002/xrs.602

Subject(s) - electron , yield (engineering) , x ray , excitation , photon , radiation , range (aeronautics) , x ray absorption spectroscopy , materials science , synchrotron radiation , atomic physics , analytical chemistry (journal) , chemistry , physics , optics , nuclear physics , absorption spectroscopy , quantum mechanics , metallurgy , composite material , chromatography

Thin layers of Al x Ga 1 − x As on GaAs substrates are characterized by thickness t and composition x . Measuring the GaK total electron yield (TEY) jumps delivers either x for known t or vice versa. A result of this investigation is the possibility of determining both quantities of a single layer structure by a systematic variation of the incidence angle of x‐radiation with regard to the specimen surface in the range 1–10°. Owing to the influence of the statistical significance of the measured data on the computed values of x and t , an x‐ray source with sufficient photon flux is an essential requirement. Possible applications are x ‐values from 0 up to 0.5 and thicknesses from 0 up to 100 nm. Copyright © 2002 John Wiley & Sons, Ltd.

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