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Determination of dopants in ZnO‐based ceramic varistors by x‐ray fluorescence and inductively coupled plasma spectrometry
Author(s) -
Caballero A. C.,
Valle F. J.,
Martín Rubí J. A.
Publication year - 2001
Publication title -
x‐ray spectrometry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.447
H-Index - 45
eISSN - 1097-4539
pISSN - 0049-8246
DOI - 10.1002/xrs.498
Subject(s) - inductively coupled plasma , dopant , analytical chemistry (journal) , anhydrous , volatilisation , thermogravimetry , mass spectrometry , ceramic , materials science , inductively coupled plasma mass spectrometry , fluorescence spectrometry , inductively coupled plasma atomic emission spectroscopy , sample preparation , chemistry , fluorescence , plasma , doping , metallurgy , chromatography , inorganic chemistry , physics , optoelectronics , organic chemistry , quantum mechanics
A method is proposed for the x‐ray fluorescence (XRF) analysis of dopant concentrations in ZnO ceramic materials. The accuracy of the results is good for all the dopants analyzed except Bi 2 O 3 . The thermal behavior of this component was followed by thermogravimetry, showing that in an anhydrous Li 2 B 4 O 7 medium, partial Bi 2 O 3 volatilization occurs at the temperatures needed for glass bead formation (1100–1200 °C). For comparison, inductively coupled plasma atomic emission spectrometry (ICP‐AES) analysis of the materials was carried out following a wet procedure for sample solution preparation. The results were in agreement with those obtained by XRF except for Bi 2 O 3 . However, if Bi 2 O 3 volatilization is avoided, the analysis is accurate. Copyright © 2001 John Wiley & Sons, Ltd.
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