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Background spectrum of synchrotron radiation‐excited total reflection x‐ray fluorescence for Si wafer analysis
Author(s) -
Shin N. S.,
Chang C. H.,
Koo Y. M.,
Padmore H.
Publication year - 2001
Publication title -
x‐ray spectrometry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.447
H-Index - 45
eISSN - 1097-4539
pISSN - 0049-8246
DOI - 10.1002/xrs.477
Subject(s) - synchrotron radiation , x ray fluorescence , wafer , total internal reflection , excited state , synchrotron , detection limit , fluorescence , analytical chemistry (journal) , materials science , spectral line , radiation , reflection (computer programming) , range (aeronautics) , optics , atomic physics , chemistry , optoelectronics , physics , chromatography , astronomy , computer science , composite material , programming language
In the synchrotron radiation‐excited total reflection x‐ray fluorescence (SR‐TXRF) determination of surface contaminants on Si wafers, the minimum detection limit is intrinsically determined by the background spectrum. The absolute counts of background spectra for the whole energy range concerned was calculated under the usual SR‐TXRF experimental conditions and was compared with measurements. The detection limits for contaminants near the surface of Si wafers within a few atomic layers were evaluated from the calculated background spectrum and the fluorescence signal under given experimental conditions. Copyright © 2001 John Wiley & Sons, Ltd.