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Investigation of the intershell higher order resonant recombination and polarization of X‐ray emission of B‐like silicon ions
Author(s) -
Xie Luyou,
Lu Simei,
Cheng Xiaoshu,
Zhang Denghong,
Jiang Jun,
Dong Chenzhong
Publication year - 2019
Publication title -
x‐ray spectrometry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.447
H-Index - 45
eISSN - 1097-4539
pISSN - 0049-8246
DOI - 10.1002/xrs.3081
Subject(s) - metastability , ion , recombination , atomic physics , ground state , polarization (electrochemistry) , physics , silicon , resonance (particle physics) , chemistry , biochemistry , optoelectronics , quantum mechanics , gene
K‐shell dielectronic, trielectronic, and quadruelectronic recombination and polarization of X‐ray emission have been studied for the highly charged S i 9+ ions in the initial ground state 2 P 1/2 and the metastable state 2 P 3/2 using the Flexible Atomic Code. It is found that the resonant recombination cross section from the long‐lived metastable state is comparable in magnitude with that of the ground state, so it is important for plasma diagnostics. For S i 9+ ( 2 P 1/2 ), trielectronic recombination contributions of nearly 25% to the total resonant recombination strength are predicted, which is less than previous calculations. We compare the degree of linear polarization for the eleven dominant resonant recombination satellite lines from the initial parent S i 9+ ( 2 P 1/2 ) and S i 9+ ( 2 P 3/2 ) ions. For the same X‐ray lines, large variations of polarization are found between 2 P 1/2 and 2 P 3/2 , which can be employed to diagnose formation mechanisms of intermediate resonance states and corresponding X‐ray lines.