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Influence of contamination layer on thickness evaluation by X‐ray reflectometry
Author(s) -
Azuma Yasushi,
Kurokawa Akira
Publication year - 2019
Publication title -
x‐ray spectrometry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.447
H-Index - 45
eISSN - 1097-4539
pISSN - 0049-8246
DOI - 10.1002/xrs.3006
Subject(s) - x ray reflectivity , reflectometry , contamination , layer (electronics) , materials science , substrate (aquarium) , analytical chemistry (journal) , optics , composite material , chemistry , nanotechnology , chromatography , physics , geology , thin film , time domain , ecology , oceanography , computer science , computer vision , biology
In this study, the effect of allowing for a contamination layer on a SiO 2 film/Si substrate system on thickness determination by X‐ray reflectometry (XRR) was investigated. The calculated XRR profiles obtained using a calculation model that utilizes a contamination layer for analysis showed good agreement with measured profiles. Further, the obtained physical structures were promising and within acceptable limits. Where the existence of a contamination layer was ignored in the calculation process, a part of the thickness of the contamination layer was incorporated into the determined thickness of the SiO 2 layer. In that case, the evaluated thickness was proportional to the density ratio between the contaminated and SiO 2 layers. The results of investigation of the effect of X‐ray energy on layer thickness determination indicated that the effects of contamination also depend on the X‐ray energy used for XRR measurements. These effects increase in the case of experiments that employ X‐ray energy with a high contrast for the contamination.