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Depth profiling by XFA with selective excitation and variation of incidence and take‐off angle of x‐rays
Author(s) -
Ebel H.,
Ebel M. F.,
Svagera R.,
Heller M.,
Pöhn C.,
Kaitna R.
Publication year - 1993
Publication title -
x‐ray spectrometry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.447
H-Index - 45
eISSN - 1097-4539
pISSN - 0049-8246
DOI - 10.1002/xrs.1300220424
Subject(s) - excitation , angle of incidence (optics) , thin film , optics , materials science , analytical chemistry (journal) , geometry , physics , chemistry , mathematics , chromatography , nanotechnology , quantum mechanics
A method for the determination of the composition and thickness of thin Al x Ga 1‐x As films on GaAs substrates by means of energy‐dispersive XFA with variable x‐ray geometry and with selective excitation of characteristic sample radiations is developed. It can be applied without reference samples. The method was derived from XFA with variable take‐off angle. An outline of the theory of the method and the evaluation of measured characteristic signals for an unknown composition x and thickness D of the films is given. This method can be applied to the determination of the compositions and thicknesses of thin multi‐element films.