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Influence of in‐sample scattering of fluorescent radiation on line shapes of Si(Li) detectors in XRF studies
Author(s) -
KisVarga M.,
Végh J.
Publication year - 1993
Publication title -
x‐ray spectrometry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.447
H-Index - 45
eISSN - 1097-4539
pISSN - 0049-8246
DOI - 10.1002/xrs.1300220311
Subject(s) - fluorescence , radiation , line (geometry) , detector , scattering , sample (material) , optics , materials science , physics , analytical chemistry (journal) , chemistry , chromatography , mathematics , geometry , thermodynamics
The line‐shape degradation due to Compton scattering of fluorescent radiation was studied in thick, low‐atomic‐number samples. The Compton shelf/photopeak area ratios for elements from Y to I were determined from leastsquares fits. Compton contributions are given as a function of sample thickness for annular‐shaped Am‐241 isotope excitation in the usual XRF geometry. Measurements were also performed with collimated point source and tube excitation. The measured Compton shelves of fluorescent lines were compared with the values obtained from simulation by the SHAPE program package of Fernández and Sumini.