Premium
X‐ray analysis of thin Ge x C y O z : H films
Author(s) -
Ebel M. F.,
Ebel H.,
Mantler M.,
Wernisch J.,
Svagera R.,
Gazicki M.,
Olcaytug F.,
Schalko J.,
Kohl F.,
Jachimowicz A.
Publication year - 1992
Publication title -
x‐ray spectrometry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.447
H-Index - 45
eISSN - 1097-4539
pISSN - 0049-8246
DOI - 10.1002/xrs.1300210308
Subject(s) - analytical chemistry (journal) , thin film , x ray photoelectron spectroscopy , sputter deposition , materials science , cavity magnetron , x ray , microanalysis , scanning electron microscope , germanium , chemistry , sputtering , silicon , optics , nuclear magnetic resonance , nanotechnology , metallurgy , physics , organic chemistry , chromatography , composite material
Investigations by means of x‐ray photoelectron spectrometry, electron probe microanalysis, x‐ray fluorescence analysis, imaging x‐ray fluorescence analysis, x‐ray diffraction and secondary ion mass spectrometry were performed to quantify thin Ge x C y O z : H films. The films were prepared by r.f. plasma deposition of tetraethylgermanium in a parallel‐plate system and in a two‐rod discharge system with magnetron enhancement. The results of these investigations indicated that depth profiling delivers a homogeneous composition, with the exception of the outermost surface. At a constant flow‐rate of tetraethylgermanium, the film density and the Ge/C atomic ration increase with increasing r.f. power density towards a maximum of 3.5 g cm −3 and 0.5, respectively. The hydrogen content does not change significantly. At low r.f. power densities there is a considerable increase in oxygen. There is no evidence for crystalline germanium carbide. Magnetron enhancement causes an increasing deposition rate and an inhomogeneous deposition in the lateral direction of the films.