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Characterization of II–VI semiconductor materials using surface analytical techniques
Author(s) -
Kibel Martyn H.
Publication year - 1990
Publication title -
x‐ray spectrometry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.447
H-Index - 45
eISSN - 1097-4539
pISSN - 0049-8246
DOI - 10.1002/xrs.1300190209
Subject(s) - x ray photoelectron spectroscopy , auger electron spectroscopy , characterization (materials science) , semiconductor , spectroscopy , materials science , semiconductor materials , analytical chemistry (journal) , electron spectroscopy , engineering physics , nanotechnology , optoelectronics , chemistry , chemical engineering , physics , engineering , nuclear physics , quantum mechanics , chromatography
The production, properties and structure of II–VI semiconductor materials are topics of increasingly intense research activity. This paper discusses the use of the surface analytical techniques x‐ray photoelectron spectroscopy, Auger electron spectroscopy and energy‐dispersive x‐ray spectroscopy to study and characterize these materials, and hence assist in understanding the growth process.