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Determination of the thickness of SiO 2 layers on SI by X‐ray spectrometry
Author(s) -
Ebel M. F.,
Ebel H.,
Wernisch J.
Publication year - 1980
Publication title -
x‐ray spectrometry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.447
H-Index - 45
eISSN - 1097-4539
pISSN - 0049-8246
DOI - 10.1002/xrs.1300090208
Subject(s) - x ray , x ray photoelectron spectroscopy , mass spectrometry , scanning electron microscope , analytical chemistry (journal) , materials science , range (aeronautics) , diffraction , spectroscopy , x ray spectroscopy , optics , chemistry , physics , nuclear magnetic resonance , chromatography , quantum mechanics , composite material
This paper shows the employment of five X‐ray methods for the investigation of a thickness range of 1 Å to 0.1 mm. The well known techniques (X‐ray fluorescence and scanning electron microscopy) are treated, a new method (energy‐dispersive X‐ray diffraction) is discussed and X‐ray photoelectron spectroscopy measurements are essentially improved by a new evaluation method. Low energy electron induced X‐ray spectrometry is mentioned. As far as significance of the measured thicknesses is concerned, the range of 10‐‐50 nm deserves special attention.