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Nanoresolution interface studies in thin films by synchrotron x‐ray diffraction and by using x‐ray waveguide structure
Author(s) -
Erdélyi Z.,
Cserháti C.,
Csik A.,
Daróczi L.,
Langer G. A.,
Balogh Z.,
Varga M.,
Beke D. L.,
Zizak I.,
Erko A.
Publication year - 2009
Publication title -
x‐ray spectrometry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.447
H-Index - 45
eISSN - 1097-4539
pISSN - 0049-8246
DOI - 10.1002/xrs.1170
Subject(s) - synchrotron radiation , extended x ray absorption fine structure , synchrotron , diffraction , materials science , x ray , analytical chemistry (journal) , xanes , x ray crystallography , optics , absorption (acoustics) , intermetallic , spectroscopy , absorption spectroscopy , chemistry , physics , chromatography , quantum mechanics , composite material , alloy
In the last years we performed several measurements with synchrotron radiation of several facilities to reveal interesting interface phenomena on the nanoscale. We used both x‐ray diffraction1, 2 (XRD) and spectrometry techniques. In this paper, we briefly summarize the results obtained from diffraction measurements, which lead us to our recent grazing incidence x‐ray fluorescence analysis (GIXRF) and extended x‐ray absorption fine structure (EXAFS) experiments. We show how a combination of experimental methods of GIXRF analysis and EXAFS spectroscopy in fluorescence detection with x‐ray standing waves (XSW) technique was applied for the depth profiling of a‐Si/Co/a‐Si layers with nanometer resolution to monitor the growth of CoSi intermetallic phase. The investigated layers were placed into the waveguide structure formed by two Ta films to increase sensitivity and accuracy of the measurements. Copyright © 2009 John Wiley & Sons, Ltd.