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Mechanical properties of silicon nanowires
Author(s) -
Furmanchuk Al'ona,
Isayev Olexandr,
Dinadayalane Tandabany C.,
Leszczynska Danuta,
Leszczynski Jerzy
Publication year - 2012
Publication title -
wiley interdisciplinary reviews: computational molecular science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.126
H-Index - 81
eISSN - 1759-0884
pISSN - 1759-0876
DOI - 10.1002/wcms.1108
Subject(s) - nanowire , modulus , materials science , softening , silicon nanowires , brittleness , silicon , nanotechnology , composite material , optoelectronics
Silicon nanowires (SiNWs) are at the top of the list of materials used in conventional electromechanical devices as well as in strained nanotechnology. Both experimental and theoretical studies showed the size‐dependent character of mechanical properties of SiNWs. However, the surface contaminations, local surface strains, ‘boundary conditions’, native oxide, equipment‐induced errors, and the errors caused by postprocessing of results lead to softening of Young's modulus and extension of the region where the size dependency is seen by experimentalists. Application of improved potentials or advanced theoretical modeling such as inclusion of explicit treatment of temperature and quantum‐mechanical effects allows to show specificity of Young's modulus to the size and shape in case of small (width <4 nm) nanowires. The ductile‐brittle transitions of SiNWs at different temperatures are revealed. Some suggestions on postprocessing techniques are discussed. © 2012 John Wiley & Sons, Ltd. This article is categorized under: Structure and Mechanism > Molecular Structures